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STFI24N60M2 数据表(PDF) 5 Page - STMicroelectronics |
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STFI24N60M2 数据表(HTML) 5 Page - STMicroelectronics |
5 / 14 page DocID024026 Rev 4 5/14 STF24N60M2, STFI24N60M2 Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 300 V, ID = 9 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14 and 19) -14 - ns tr Rise time - 9 - ns td(off) Turn-off delay time - 60 - ns tf Fall time - 15 - ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD (1) 1. The value is rated according to Rthj-case and limited by package. Source-drain current - 18 A ISDM (1),(2) 2. Pulse width limited by safe operating area Source-drain current (pulsed) - 72 A VSD (3) 3. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 18 A, VGS = 0 - 1.6 V trr Reverse recovery time ISD = 18 A, di/dt = 100 A/µs VDD = 60 V (see Figure 16) -332 ns Qrr Reverse recovery charge - 4 µC IRRM Reverse recovery current - 24 A trr Reverse recovery time ISD = 18 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 16) -450 ns Qrr Reverse recovery charge - 5.5 µC IRRM Reverse recovery current - 25 A |
类似零件编号 - STFI24N60M2 |
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类似说明 - STFI24N60M2 |
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