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TIP2955 数据表(PDF) 3 Page - ON Semiconductor |
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TIP2955 数据表(HTML) 3 Page - ON Semiconductor |
3 / 6 page TIP3055 (NPN), TIP2955 (PNP) http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) VCEO(sus) 60 − Vdc Collector Cutoff Current (VCE = 70 Vdc, RBE = 100 Ohms) ICER − 1.0 mAdc Collector Cutoff Current (VCE = 30 Vdc, IB = 0) ICEO − 0.7 mAdc Collector Cutoff Current (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) ICEV − 5.0 mAdc Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO − 5.0 mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE 20 5.0 70 − − Collector−Emitter Saturation Voltage (IC = 4.0 Adc, IB = 400 mAdc) (IC = 10 Adc, IB = 3.3 Adc) VCE(sat) − − 1.1 3.0 Vdc Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) − 1.8 Vdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 30 Vdc, t = 1.0 s; Nonrepetitive) Is/b 3.0 − Adc DYNAMIC CHARACTERISTICS Current Gain — Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT 2.5 − MHz Small−Signal Current Gain (VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz) hfe 15 − kHz NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. |
类似零件编号 - TIP2955 |
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类似说明 - TIP2955 |
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