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SI7149DP-T1-GE3 数据表(PDF) 4 Page - Vishay Siliconix |
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SI7149DP-T1-GE3 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 68934 S-82620-Rev. A, 03-Nov-08 Vishay Siliconix Si7149DP New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 TJ = 150 °C TJ = 25 °C VSD -Source-to-Drain Voltage (V) - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID =1mA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.01 0.02 0.03 0.04 0.05 012 3 45 67 8 910 TJ = 25 °C TJ = 125 °C ID =15A VGS - Gate-to-Source Voltage (V) 0 40 80 120 160 200 0 1 1 1 0 0 . 0 0.01 0.1 Time (s) Safe Operating Area 0.01 100 1 100 0.01 0.1 1ms 10 ms 100 ms 0.1 1 10 10 TA = 25 °C Single Pulse Limited byRDS(on)* 1s 10 s DC BVDSS Limited VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified |
类似零件编号 - SI7149DP-T1-GE3 |
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类似说明 - SI7149DP-T1-GE3 |
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