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SI7120DN-T1-E3 数据表(PDF) 4 Page - Vishay Siliconix |
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SI7120DN-T1-E3 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 12 page www.vishay.com 4 Document Number: 72771 S-80581-Rev. E, 17-Mar-08 Vishay Siliconix Si7120DN TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Threshold Voltage - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient 0.01 0 1 40 50 10 600 Time (s) 30 20 0.1 10 100 Safe Operating Area VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 TA = 25 °C Single Pulse P(t) = 10 DC 0.1 IDM Limited ID(on) Limited Limited by RDS(on)* BVDSS Limited P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 P(t) = 0.0001 Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 600 10-1 10-4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
类似零件编号 - SI7120DN-T1-E3 |
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类似说明 - SI7120DN-T1-E3 |
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