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IRF7470TRPBF 数据表(PDF) 2 Page - International Rectifier |
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IRF7470TRPBF 数据表(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7470PbF 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. ––– 0.80 1.3 V TJ = 25°C, IS = 8.0A, VGS = 0V ––– 0.65 ––– TJ = 125°C, IS = 8.0A, VGS = 0V trr Reverse Recovery Time ––– 72 110 ns TJ = 25°C, IF = 8.0A, VR= 20V Qrr Reverse Recovery Charge ––– 130 200 nC di/dt = 100A/µs trr Reverse Recovery Time ––– 76 110 ns TJ = 125°C, IF = 8.0A, VR=20V Qrr Reverse Recovery Charge ––– 150 230 nC di/dt = 100A/µs S D G Diode Characteristics 2.3 85 A VSD Diode Forward Voltage Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 300 mJ IAR Avalanche Current ––– 8.0 A Avalanche Characteristics Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C Reference to 25°C, ID = 1mA ––– 9.0 13 VGS = 10V, ID = 10A ––– 10 15 m Ω VGS = 4.5V, ID = 8.0A ––– 14.5 30 VGS = 2.8V, ID = 5.0A VGS(th) Gate Threshold Voltage 0.8 ––– 2.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 32V, VGS = 0V ––– ––– 100 VDS = 32V, VGS = 0V, TJ = 125C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -12V Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 27 ––– ––– S VDS = 20V, ID = 8.0A Qg Total Gate Charge ––– 29 44 ID = 8.0A Qgs Gate-to-Source Charge ––– 7.9 12 nC VDS = 20V Qgd Gate-to-Drain ("Miller") Charge ––– 8.0 12 VGS = 4.5V Qoss Output Gate Charge ––– 23 35 VGS = 0V, VDS = 16V td(on) Turn-On Delay Time ––– 10 ––– VDD = 20V tr Rise Time ––– 1.9 ––– ID = 8.0A td(off) Turn-Off Delay Time ––– 21 ––– RG = 1.8Ω tf Fall Time ––– 3.2 ––– VGS = 4.5V Ciss Input Capacitance ––– 3430 ––– VGS = 0V Coss Output Capacitance ––– 690 ––– VDS = 20V Crss Reverse Transfer Capacitance ––– 41 ––– pF ƒ = 1.0MHz |
类似零件编号 - IRF7470TRPBF |
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类似说明 - IRF7470TRPBF |
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