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SN74CBTLV3257RSVR 数据表(PDF) 2 Page - Texas Instruments |
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SN74CBTLV3257RSVR 数据表(HTML) 2 Page - Texas Instruments |
2 / 23 page 1B1 1A OE 1B2 SW SW 2B1 2A 2B2 SW SW 3B1 3A 3B2 SW SW 4B1 4A 4B2 SW SW S 4 7 9 12 1 15 2 3 5 6 11 10 14 13 SN74CBTLV3257 SCDS040J – DECEMBER 1997 – REVISED JANUARY 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Table 1. FUNCTION TABLE INPUTS FUNCTION /OE S L L A port = B1 port L H A port = B2 port H X Disconnect LOGIC DIAGRAM (POSITIVE LOGIC) 2 Submit Documentation Feedback Copyright © 1997–2013, Texas Instruments Incorporated Product Folder Links :SN74CBTLV3257 |
类似零件编号 - SN74CBTLV3257RSVR |
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类似说明 - SN74CBTLV3257RSVR |
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