数据搜索系统,热门电子元器件搜索 |
|
TC55VEM416BXGN55 数据表(PDF) 11 Page - Toshiba Semiconductor |
|
TC55VEM416BXGN55 数据表(HTML) 11 Page - Toshiba Semiconductor |
11 / 18 page TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 2005-08-09 11/18 WRITE CYCLE 4 ( , CONTROLLED) Note: ・ Read cycle R/W remains HIGH for the read cycle. ・ Write cycle1 (1) If CE1 (or UB or LB ) goes LOW(or CE2 goes HIGH) coincident with or after R/W goes LOW, the outputs will remain at high impedance. (2) If CE1 (or UB or LB ) goes HIGH(or CE2 goes LOW) coincident with or before R/W goes HIGH, the outputs will remain at high impedance. Don’t input the same polarity signal as a R/W signal into a OE during the write cycle. ・ Write cycle1 to 4 If OE is HIGH during the write cycle, the outputs will remain at high impedance. Because I/O signals may be in the output state at this time, input signals of reverse polarity must not be applied. UB LB Address A0~A19 R/W tWC tAS tWR tWP 1 CE DOUT I/O1~16 VALID DATA IN DIN I/O1~16 tDS tDH Hi-Z Hi-Z tCW CE2 tBW tBE tCOE tODW UB , LB tCW |
类似零件编号 - TC55VEM416BXGN55 |
|
类似说明 - TC55VEM416BXGN55 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |