2SA1241-Y datasheet(2/5 Pages) TOSHIBA

部件名	2SA1241-Y

功能描述	Power Amplifier Applications

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SA1241

2010-08-24

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = −50 V, IE = 0

―

−1.0

μA

Emitter cut-off current

IEBO

VEB = −5 V, IC = 0

―

−1.0

μA

Collector-emitter breakdown voltage

V (BR) CEO

IC = −10 mA, IB = 0

−50

―

V

hFE (1)

(Note 2)

VCE = −2 V, IC = −0.5 A

70

―

240

DC current gain

hFE (2)

VCE = −2 V, IC = −1.5 A

40

―

Collector-emitter saturation voltage

VCE (sat)

IC = −1 A, IB = −0.05 A

―

−0.5

V

Base-emitter saturation voltage

VBE (sat)

IC = −1 A, IB = −0.05 A

―

−1.2

V

Transition frequency

fT

VCE = −2 V, IC = −0.5 A

―

100

―

MHz

Collector output capacitance

Cob

VCB = −10 V, IE = 0, f = 1 MHz

―

40

―

pF

Turn-on time

ton

―

0.1

―

Storage time

tstg

―

1.0

―

Switching time

Fall time

tf

IB1 = 0.05 A,IB2 = 0.05 A

DUTY CYCLE ≤ 1%

―

0.1

―

μs

Note 2: hFE (1) classification O: 70 to 140, Y: 120 to 240

Marking

Note 3: A line under a Lot No. identifies the indication of product Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27

January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

20 μs

INPUT

IB2

IB1

OUTPUT

VCC = −30 V

IB2

A1241

Lot No.

Note 3

Characteristics

indicator

Part No. (or abbreviation code)

类似零件编号 - 2SA1241-Y

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	2SA1241-O	189Kb / 5P	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

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