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TPCA8A02-H 数据表(PDF) 3 Page - Toshiba Semiconductor

部件名 TPCA8A02-H
功能描述  High Efficiency DC-DC Converter Applications Notebook PC Applications
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

TPCA8A02-H 数据表(HTML) 3 Page - Toshiba Semiconductor

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TPCA8A02-H
2010-01-19
3
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
Drain cutoff current
IDSS
VDS = 30 V, VGS = 0 V
100
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
Drain-source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = −20 V
15
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.3
2.3
V
VGS = 4.5 V, ID = 17 A
4.8
6.7
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 17 A
3.8
5.3
m
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 17 A
45
90
S
Input capacitance
Ciss
2640
3430
Reverse transfer capacitance
Crss
100
150
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
610
pF
Gate resistance
rg
VDS = 10 V, VGS = 0 V, f = 5 MHz
1.0
1.5
Ω
Rise time
tr
3.6
Turn-on time
ton
12
Fall time
tf
7.7
Switching time
Turn-off time
toff
Duty
≤ 1%, tw = 10 μs
40
ns
VDD ≈ 24 V, VGS = 10 V, ID = 34 A
36
Total gate charge
(gate-source plus gate-drain)
Qg
VDD ≈ 24 V, VGS = 5 V, ID = 34 A
19
Gate-source charge 1
Qgs1
8.1
Gate-drain (“Miller”) charge
Qgd
4.8
Gate switch charge
QSW
VDD ≈ 24 V, VGS = 10 V, ID = 34 A
8.6
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse
(Note 1)
IDRP
102
A
IDR = 1 A, VGS = 0 V
− 0.4
− 0.6
V
Forward voltage (diode)
VDSF
IDR = 34 A, VGS = 0 V
− 1.2
V
VDD ≈ 15 V
0 V
VGS
10 V
ID = 17 A
VOUT


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