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TPCA8A02-H 数据表(PDF) 3 Page - Toshiba Semiconductor |
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TPCA8A02-H 数据表(HTML) 3 Page - Toshiba Semiconductor |
3 / 8 page TPCA8A02-H 2010-01-19 3 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 ⎯ 2.3 V VGS = 4.5 V, ID = 17 A ⎯ 4.8 6.7 Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 17 A ⎯ 3.8 5.3 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 17 A 45 90 ⎯ S Input capacitance Ciss ⎯ 2640 3430 Reverse transfer capacitance Crss ⎯ 100 150 Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 610 ⎯ pF Gate resistance rg VDS = 10 V, VGS = 0 V, f = 5 MHz ⎯ 1.0 1.5 Ω Rise time tr ⎯ 3.6 ⎯ Turn-on time ton ⎯ 12 ⎯ Fall time tf ⎯ 7.7 ⎯ Switching time Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 40 ⎯ ns VDD ≈ 24 V, VGS = 10 V, ID = 34 A ⎯ 36 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ≈ 24 V, VGS = 5 V, ID = 34 A ⎯ 19 ⎯ Gate-source charge 1 Qgs1 ⎯ 8.1 ⎯ Gate-drain (“Miller”) charge Qgd ⎯ 4.8 ⎯ Gate switch charge QSW VDD ≈ 24 V, VGS = 10 V, ID = 34 A ⎯ 8.6 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 102 A IDR = 1 A, VGS = 0 V ⎯ − 0.4 − 0.6 V Forward voltage (diode) VDSF IDR = 34 A, VGS = 0 V ⎯ ⎯ − 1.2 V VDD ≈ 15 V 0 V VGS 10 V ID = 17 A VOUT |
类似零件编号 - TPCA8A02-H |
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类似说明 - TPCA8A02-H |
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