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SI8429DB-T1-E1 数据表(PDF) 2 Page - Vishay Siliconix

部件名 SI8429DB-T1-E1
功能描述  P-Channel 1.2 V (G-S) MOSFET
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SI8429DB-T1-E1 数据表(HTML) 2 Page - Vishay Siliconix

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Vishay Siliconix
Si8429DB
www.vishay.com
2
Document Number: 74399
S13-1847-Rev.D, 19-Aug-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 85 °C/W.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Max.
Unit
Maximum Junction-to-Ambienta, b
RthJA
35
45
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
16
20
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 8
V
VDS Temperature Coefficient
V
DS/TJ
ID = - 250 µA
- 7.5
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
- 2.2
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.35
- 0.8
V
VDS = VGS, ID = - 5 mA
- 0.6
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 5 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 8 V, VGS = 0 V
- 1
µA
VDS = - 8 V, VGS = 0 V, TJ = 70 °C
- 10
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = - 4.5 V
- 5
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 4.5 V, ID = - 1 A
0.029
0.035
VGS = - 2.5 V, ID = - 1 A
0.035
0.042
VGS = - 1.8 V, ID = - 1 A
0.043
0.052
VGS = - 1.5 V, ID = - 1 A
0.051
0.069
VGS = - 1.2 V, ID = - 1 A
0.065
0.098
Forward Transconductancea
gfs
VDS = - 4 V, ID = - 1 A
0.7
1.2
S
Dynamicb
Input Capacitance
Ciss
VDS = - 4 V, VGS = 0 V, f = 1 MHz
1640
pF
Output Capacitance
Coss
590
Reverse Transfer Capacitance
Crss
380
Total Gate Charge
Qg
VDS = - 4 V, VGS = - 5 V, ID = - 1 A
24
26
nC
VDS = - 4 V, VGS = - 4.5 V, ID = 1 A
21
32
Gate-Source Charge
Qgs
1.8
Gate-Drain Charge
Qgd
3.7
Gate Resistance
Rg
VGS = - 0.1 V, f = 1 MHz
22
Turn-On Delay Time
td(on)
VDD = - 4 V, RL = 4 
ID  - 1 A, VGEN = - 4.5 V, Rg = 6 
12
20
ns
Rise Time
tr
25
40
Turn-Off Delay Time
td(off)
260
390
Fall Time
tf
155
240


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