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SI6410DQ 数据表(PDF) 2 Page - Fairchild Semiconductor |
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SI6410DQ 数据表(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page Si6410DQ Rev B(W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 22 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 25 IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.6 3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –5 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 7.8 A VGS = 4.5 V, ID = 6.3 A 11 14 14 21 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 20 A gFS Forward Transconductance VDS = 15 V, ID = 7.8 A 31 S Dynamic Characteristics Ciss Input Capacitance 1586 pF Coss Output Capacitance 330 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 120 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 9 18 ns tr Turn–On Rise Time 8 16 ns td(off) Turn–Off Delay Time 30 48 ns tf Turn–Off Fall Time VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 11 20 ns trr Reverse Recovery Time VGS = 0 V, IF = 1.5 A, dIF/dt = 100A/ µs 24 80 ns Qg Total Gate Charge VDS = 15 V, ID = 7.8 A, VGS = 5 V 14 20 nC Qg Total Gate Charge 28 39 nC Qgs Gate–Source Charge 4 nC Qgd Gate–Drain Charge VDS = 15 V, ID = 7.8 A, VGS = 10 V 5 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 1.5 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.5 A (Note 2) 0.7 1.1 V Notes: 1. R θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while RθCA is determined by the user's board design. a) 87°C/W when mounted on a 1in 2 pad of 2 oz copper. b) 114°C/W when mounted on a minimum pad of 2 oz copper. c) Scale 1 : 1 on letter size paper 2.Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
类似零件编号 - SI6410DQ |
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类似说明 - SI6410DQ |
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