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SI6410DQ 数据表(PDF) 2 Page - Fairchild Semiconductor

部件名 SI6410DQ
功能描述  30V N-Channel PowerTrench MOSFET
Download  5 Pages
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
标志 FAIRCHILD - Fairchild Semiconductor

SI6410DQ 数据表(HTML) 2 Page - Fairchild Semiconductor

  SI6410DQ Datasheet HTML 1Page - Fairchild Semiconductor SI6410DQ Datasheet HTML 2Page - Fairchild Semiconductor SI6410DQ Datasheet HTML 3Page - Fairchild Semiconductor SI6410DQ Datasheet HTML 4Page - Fairchild Semiconductor SI6410DQ Datasheet HTML 5Page - Fairchild Semiconductor  
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Si6410DQ Rev B(W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250
µA
30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250
µA, Referenced to 25°C
22
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 30 V,
VGS = 0 V
1
µA
VDS = 30 V, VGS = 0 V, TJ = 55
°C
25
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V,
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250
µA
1
1.6
3
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA, Referenced to 25°C
–5
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
ID = 7.8 A
VGS = 4.5 V,
ID = 6.3 A
11
14
14
21
m
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
20
A
gFS
Forward Transconductance
VDS = 15 V,
ID = 7.8 A
31
S
Dynamic Characteristics
Ciss
Input Capacitance
1586
pF
Coss
Output Capacitance
330
pF
Crss
Reverse Transfer Capacitance
VDS = 15 V,
V GS = 0 V,
f = 1.0 MHz
120
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
9
18
ns
tr
Turn–On Rise Time
8
16
ns
td(off)
Turn–Off Delay Time
30
48
ns
tf
Turn–Off Fall Time
VDD = 15 V,
ID = 1 A,
VGS = 10 V,
RGEN = 6
11
20
ns
trr
Reverse Recovery Time
VGS = 0 V, IF = 1.5 A,
dIF/dt = 100A/
µs
24
80
ns
Qg
Total Gate Charge
VDS = 15 V, ID = 7.8 A, VGS = 5 V
14
20
nC
Qg
Total Gate Charge
28
39
nC
Qgs
Gate–Source Charge
4
nC
Qgd
Gate–Drain Charge
VDS = 15 V,
ID = 7.8 A,
VGS = 10 V
5
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.5
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 1.5 A
(Note 2)
0.7
1.1
V
Notes:
1. R
θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC is guaranteed by design while RθCA is determined by the user's board design.
a)
87°C/W when
mounted on a 1in
2 pad
of 2 oz copper.
b)
114°C/W when mounted
on a minimum pad of 2 oz
copper.
c)
Scale 1 : 1 on letter size
paper
2.Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


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