SI3454DV datasheet(1/5 Pages) FAIRCHILD

部件名	SI3454DV

功能描述	N-Channel PowerTrench MOSFET

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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October 2001

2001 Fairchild Semiconductor Corporation

Si3454DV Rev A

Si3454DV

N-Channel PowerTrench MOSFET

General Description

These N-Channel Logic Level MOSFETs are produced

using Fairchild Semiconductor’s advanced Power

Trench process that has been especially tailored to

minimize the on-state resistance and yet maintain

superior switching performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

Features

• 4.2 A, 30 V.

RDS(ON) = 65 m

Ω @ VGS = 10 V

RDS(ON) = 95 m

Ω @ VGS = 4.5 V

• High performance trench technology for extremely

low RDS(ON)

• Low gate charge (9.4 nC typical)

• High power and current handling capability

D

S

D

G

SuperSOT -6

TM

6

5

4

1

2

3

Absolute Maximum Ratings T

A=25

oC unless otherwise noted

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

30

V

VGSS

Gate-Source Voltage

±20

V

ID

Drain Current – Continuous

(Note 1a)

4.2

A

– Pulsed

20

Maximum Power Dissipation

(Note 1a)

1.6

W

PD

(Note 1b)

0.8

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

78

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

30

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.454

Si3454DV

7’’

8mm

3000 units

类似零件编号 - SI3454DV

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	SI3454DV-T1-E3	484Kb / 9P	N-Channel 30 V (D-S) MOSFET

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