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SI3447 数据表(PDF) 1 Page - Fairchild Semiconductor |
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SI3447 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page April 2001 2001 Fairchild Semiconductor Corporation Si3447DV Rev A (W) Si3447DV P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch • Battery protection Features • –5.5 A, –20 V. R DS(ON) = 33 m Ω @ V GS = –4.5 V RDS(ON) = 43 m Ω @ V GS = –2.5 V RDS(ON) = 60 m Ω @ V GS = –1.8 V • Fast switching speed. • High performance trench technology for extremely low RDS(ON) D D D S D G SuperSOT -6 TM 6 5 4 1 2 3 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±8 V ID Drain Current – Continuous (Note 1a) –5.5 A – Pulsed –20 Maximum Power Dissipation (Note 1a) 1.6 W PD (Note 1b) 0.8 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .447 Si3447DV 7’’ 8mm 3000 units |
类似零件编号 - SI3447 |
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类似说明 - SI3447 |
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