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FAN54042 数据表(PDF) 6 Page - Fairchild Semiconductor |
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FAN54042 数据表(HTML) 6 Page - Fairchild Semiconductor |
6 / 41 page © 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN54040 – FAN54047 • Rev. 1.0.2 6 Electrical Specifications Unless otherwise specified: according to the circuit of Figure 1; recommended operating temperature range for TJ and TA; VBUS=5.0 V; HZ_MODE; OPA_MODE=0; (Charge Mode); SCL, SDA=0 or 1.8 V; and typical values are for TJ=25°C. Symbol Parameter Conditions Min. Typ. Max. Unit Power Supplies IVBUS VBUS Current VBUS > VBUS(min), PWM Switching 10 mA VBUS > VBUS(min); VBAT > VOREG IBUSLIM=100 mA 2.5 mA 0°C < TJ < 85°C, HZ_MODE=1 VBAT < VLOWV, 32S Mode, IREG=0 280 A IBAT_HZ Battery Discharge Current in High- Impedance Mode DIS=1, or HZ_MODE=1, VBUS=0, 5 V or Floating, VBAT=4.2 V <1 10 A IBUS_HZ Battery Leakage Current to VBUS in High-Impedance Mode DIS=1, or HZ_MODE=1, VBUS Shorted to Ground, VBAT=4.2 V -5.0 -0.2 A Charger Voltage Regulation VOREG Charge Voltage Range 3.5 4.4 V Charge Voltage Accuracy TA=25°C –0.5 +0.5 % TJ=0 to 125°C –1 +1 % Charging Current Regulation IOCHRG Output Charge Current Range VLOWV < VBAT < VOREG IO_LEVEL=0 550 1550 mA IO_LEVEL=1 290 340 390 mA Charge Current Accuracy IO_LEVEL=0 –5 +5 % Weak Battery Detection VLOWV Weak Battery Threshold Range 3.4 3.7 V Weak Battery Threshold Accuracy –5 +5 % Weak Battery Deglitch Time Rising Voltage, 2 mV Overdrive 30 ms Logic Levels : DIS, SDA, SCL VIH High-Level Input Voltage 1.05 V VIL Low-Level Input Voltage 0.4 V IIN Input Bias Current Input Tied to GND or VBUS 0.01 1.00 A Charge Termination Detection I(TERM) Termination Current Range VBAT > VOREG – VRCH, VBUS > VSLP 50 400 mA Termination Current Accuracy ITERM Setting < 100 mA –15 +15 % ITERM Setting > 200 mA –5 +5 Termination Current Deglitch Time 30 ms Power Path (Q4) Control ILIN Power Path Max. Charge Current IO_LEVEL=1 290 340 390 mA IBUSLIM > 01, IOCHARGE < 02 IO_LEVEL=0 400 450 510 mA IBUSLIM > 01, IOCHARGE > 02 IO_LEVEL=0 650 725 800 mA VTHSYS VBAT to SYS Threshold for Q4 and Gate Transition While Charging (SYS-VBAT) Falling –6 –5 –3 mV (SYS-VBAT) Rising -1 +1 2 mV Production Test Mode VBAT(PTM) Production Test Output Voltage 1 mA < IBAT < 2 A, VBUS=5.5 V 4.116 4.200 4.284 V IBAT(PTM) Production Test Output Current 20% Duty with Max. Period 10 ms 2.3 A Continued on the following page… |
类似零件编号 - FAN54042 |
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类似说明 - FAN54042 |
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