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IRF9630 数据表(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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IRF9630 数据表(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
2 / 7 page 2 IRF9630, SiHF9630 Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC -1.7 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 200 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = - 1 mA - - 0.24 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 200 V, VGS = 0 V - - - 100 µA VDS = - 160 V, VGS = 0 V, TJ = 125 °C - - - 500 Drain-Source On-State Resistance RDS(on) VGS = - 10 V ID = - 3.9 Ab -- 0.80 Ω Forward Transconductance gfs VDS = - 50 V, ID = - 3.9 Ab 2.8 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 - 700 - pF Output Capacitance Coss - 200 - Reverse Transfer Capacitance Crss -40 - Total Gate Charge Qg VGS = - 10 V ID = - 6.5 A, VDS = - 160 V, see fig. 6 and 13b -- 29 nC Gate-Source Charge Qgs -- 5.4 Gate-Drain Charge Qgd -- 15 Turn-On Delay Time td(on) VDD = - 100 V, ID = - 6.5 A, rG = 12 Ω, rD = 15 Ω, see fig. 10b -12 - ns Rise Time tr -27 - Turn-Off Delay Time td(off) -28 - Fall Time tf -24 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- - 6.5 A Pulsed Diode Forward Currenta ISM -- - 26 Body Diode Voltage VSD TJ = 25 °C, IS = - 6.5 A, VGS = 0 Vb -- - 6.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = - 6.5 A, dI/dt = 100 A/µsb - 200 300 ns Body Diode Reverse Recovery Charge Qrr -1.9 2.9 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G www.kersemi.com |
类似零件编号 - IRF9630 |
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类似说明 - IRF9630 |
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