Si3441DV Rev A (W)

Typical Characteristics

0

1

2

3

4

5

0123

45678

9

-10V

-15V

0

200

400

600

800

1000

0

5

10

15

20

C

ISS

C

RSS

f = 1 MHz

V

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1

1

10

100

DC

1s

100ms

100

µs

SINGLE PULSE

10ms

1ms

0

2

4

6

8

10

0.01

0.1

1

10

100

SINGLE PULSE

T

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

1

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000

t

P(pk)

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.