LMZ12010

SNVS667F – FEBRUARY 2010 – REVISED MARCH 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

VIN to PGND

-0.3V to 24V

EN to AGND

-0.3V to 5.5V

SS, FB to AGND

-0.3V to 2.5V

AGND to PGND

-0.3V to 0.3V

Junction Temperature

150°C

Storage Temperature Range

-65°C to 150°C

± 2 kV

Peak Reflow Case Temperature

245°C

(30 sec)

For soldering specifications, refer to the following document: www.ti.com/lit/snoa549c

(1)

Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which

operation of the device is intended to be functional. For ensured specifications and test conditions, see the Electrical Characteristics.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3)

The human body model is a 100pF capacitor discharged through a 1.5 k

Ω resistor into each pin. Test method is per JESD-22-114.

Operating Ratings

(1)

VIN

6V to 20V

EN

0V to 5.0V

Operation Junction Temperature

−40°C to 125°C

(1)

Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which

operation of the device is intended to be functional. For ensured specifications and test conditions, see the Electrical Characteristics.

4

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