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AD871SD883B 数据表(PDF) 6 Page - List of Unclassifed Manufacturers

部件名 AD871SD883B
功能描述  MICROCIRCUIT, LINEAR, A/D CONVERTER, 12-BIT, 5 MSPS, MONOLITHIC SILICON
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制造商  ETC2 [List of Unclassifed Manufacturers]
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标志 ETC2 - List of Unclassifed Manufacturers

AD871SD883B 数据表(HTML) 6 Page - List of Unclassifed Manufacturers

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STANDARD
MICROCIRCUIT DRAWING
SIZE
A
5962-94686
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
6
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/
-55
°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits 2/
Unit
Min
Max
Logic input low current
(CLK)
01
±10
Logic input low current
(OEN, CLK)
IIL
1,2,3
02
±10
µA
Logic output high voltage
( MSB -Bit 12, OTR)
VOH
ISOURCE = 500
µA
1,2,3
01,02
2.4
V
Logic output low voltage
( MSB -Bit 12, OTR)
VOL
ISINK = 1.6 mA
1,2,3
01,02
0.4
V
Leakage
IZ
Three-state
1,2,3
02
±10
µA
Clock period
tC
Duty cycle = 50%,
See figure 2
9,10,11
01,02
200
ns
Output delay
tOD
See figure 2
9,10,11
01,02
10
ns
1/ Unless otherwise specified, AVDD = +5 V, AVSS = -5 V, DVDD = +5 V, and DRVDD = +5 V.
2/ The limiting term “min” (minimum) and “max” (maximum) shall be considered to apply to magnitudes only. Negative current
shall be defined as conventional current flow out of a device terminal.
3/ Minimum resolution for which “no missing codes” is guaranteed.
4/ Test conditions for PSRR: 4.75 V
≤ AVDD ≤ 5.25 V, -5.25 V ≤ AVSS ≤ -4.75 V, 4.75 V ≤ DVDD ≤ 5.25 V.
4. QUALITY ASSURANCE PROVISIONS
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be
in accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition B. The test circuit shall be maintained by the manufacturer under document revision level control
and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test
method 1015.
(2) TA = +125
°C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table II herein.


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