SI7682DP-T1-E3 datasheet(5/9 Pages) VISHAY

部件名	SI7682DP-T1-E3

功能描述	N-Channel 30-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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5 / 9 page

Document Number: 73350

S09-0272-Rev. B, 16-Feb-09

www.vishay.com

5

Vishay Siliconix

Si7682DP

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

10

20

30

40

50

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Package Limited

Power, Junction-to-Foot

0

5

10

15

20

25

30

35

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power, Junction-to-Ambient

0.0

0.5

1.0

1.5

2.0

2.5

0

25

50

75

100

125

150

TA - Ambient Temperature (°C)

类似零件编号 - SI7682DP-T1-E3

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI7682DP	99Kb / 7P	N-Channel 30-V (D-S) MOSFET Rev. B, 16-Feb-09

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