SI4477DY-T1-GE3 datasheet(5/10 Pages) VISHAY

部件名	SI4477DY-T1-GE3

功能描述	P-Channel 20-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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5 / 10 page

Vishay Siliconix

Si4477DY

Document Number: 64829

S09-0858-Rev. A, 18-May-09

www.vishay.com

5

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

5

10

15

20

25

30

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power, Junction-to-Foot

0

2

4

6

8

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power Derating, Junction-to-Ambient

0.0

0.4

0.8

1.2

1.6

2.0

0

25

50

75

100

125

150

TA -Ambient Temperature (°C)

类似零件编号 - SI4477DY-T1-GE3

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