IRF830A datasheet(6/7 Pages) KERSEMI

部件名	IRF830A

功能描述	Low Gate Charge Qg Results in Simple Drive Requirement

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制造商	KERSEMI [Kersemi Electronic Co., Ltd.]

网页	http://www.kersemi.com

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6

IRF830A, SiHF830A

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Fig. 13a - Basic Gate Charge Waveform

Fig. 12d - Typical Drain-to-Source Voltage vs.

Avalanche Current

Fig. 13b - Gate Charge Test Circuit

Q

GS

Q

GD

Q

G

VG

Charge

10 V

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 k

Ω

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

www.kersemi.com

类似零件编号 - IRF830A

制造商	部件名	数据表	功能描述
International Rectifier	IRF830A	141Kb / 8P	HEXFET Power MOSFET
International Rectifier	IRF830A	108Kb / 8P	SMPS MOSFET
Vishay Siliconix	IRF830A	969Kb / 8P	Power MOSFET Rev. B, 02-Jun-08
Vishay Siliconix	IRF830A	1Mb / 9P	Power MOSFET Rev. C, 21-Mar-11
Inchange Semiconductor ...	IRF830A	280Kb / 2P	isc N-Channel MOSFET Transistor

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