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3N100E 数据表(PDF) 1 Page - Motorola, Inc |
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3N100E 数据表(HTML) 1 Page - Motorola, Inc |
1 / 10 page 1 Motorola TMOS Power MOSFET Transistor Device Data Designer's™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading perfor- mance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commuta- tion modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Robust High Voltage Termination • Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short Heatsink Tab Manufactured — Not Sheared • Specially Designed Leadframe for Maximum Power Dissipation • Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–Source Voltage VDSS 1000 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 1000 Vdc Gate–Source Voltage — Continuous Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current — Continuous Drain Current — Continuous @ 100 °C Drain Current — Single Pulse (tp ≤ 10 µs) ID ID IDM 3.0 2.4 9.0 Adc Apk Total Power Dissipation Derate above 25 °C Total Power Dissipation @ TA = 25°C, when mounted with the minimum recommended pad size PD 125 1.0 2.5 Watts W/ °C Watts Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 7.0 Apk, L = 10 mH, RG = 25 Ω) EAS 245 mJ Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Thermal Resistance — Junction to Ambient, when mounted with the minimum recommended pad size R θJC R θJA R θJA 1.0 62.5 50 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 10 seconds TL 260 °C Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. Order this document by MTB3N100E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTB3N100E TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM Motorola Preferred Device CASE 418B–02, Style 2 D2PAK D S G ® © Motorola, Inc. 1995 REV 2 |
类似零件编号 - 3N100E |
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类似说明 - 3N100E |
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