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2SC4703 数据表(PDF) 3 Page - Renesas Technology Corp

部件名 2SC4703
功能描述  NPN EPITAXIAL SILICON RF TRANSISTOR FOR
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

2SC4703 数据表(HTML) 3 Page - Renesas Technology Corp

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DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC4703
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
3-PIN POWER MINIMOLD
The mark
• shows major revised points.
Document No. PU10339EJ01V1DS (1st edition)
Date Published May 2003 CP(K)
Printed in Japan
©
©
©
© NEC Compound Semiconductor Devices 1994, 2003
DESCRIPTION
The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V).
This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface
mount type plastic package, power minimold (SOT-89).
FEATURES
• Low distortion, low voltage: IM2 = 55 dBc TYP., IM3 = 76 dBc TYP. @ VCE = 5 V, IC = 50 mA, VO = 105 dB
µV/75Ω
• Large Ptot : Ptot = 1.8 W (Mounted on double-sided copper-clad 16 cm
2
× 0.7 mm (t) ceramic substrate)
• Small package : 3-pin power minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC4703
25 pcs (Non reel)
• 12 mm wide embossed taping
2SC4703-T1
1 kpcs/reel
• Collector face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
2.5
V
Collector Current
IC
150
mA
Total Power Dissipation
Ptot
Note
1.8
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Mounted on double-sided copper-clad 16 cm
2
× 0.7 mm (t) ceramic substrate


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