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TPCP8701 数据表(PDF) 3 Page - Toshiba Semiconductor |
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TPCP8701 数据表(HTML) 3 Page - Toshiba Semiconductor |
3 / 5 page TPCP8701 2004-05-11 3 VBE (sat) – IC 0.001 10 10 100 10000 1000 0.01 0.1 Ta = 100°C −55°C 25°C 0.001 0.1 10 10 1 0.01 0.1 Ta = −55°C 100°C 25°C 0.001 0.001 10 1 0.1 0.01 0.1 Ta = 100°C −55°C 25°C 0 0 1.6 3 −55°C Ta = 100°C 25°C Collector −emitter voltage VCE (V) IC – VCE Collector current IC (A) hFE – IC Collector current IC (A) VCE (sat) – IC Collector current IC (A) Base −emitter saturation voltage VBE (V) IC – VBE 0 0 0.4 0.8 1.0 1 3 4 Common emitter Ta = 25°C Single nonrepetitive pulse 2 IB = 1 mA 20 10 5 2 0.6 0.2 2 1 1.2 0.4 0.8 Common emitter VCE = 2 V Single nonrepetitive pulse Common emitter β = 50 Single nonrepetitive pulse Common emitter β = 50 Single nonrepetitive pulse Common emitter VCE = 2 V Single nonrepetitive pulse 30 40 50 60 70 1 1 0.01 1 Ambient temperature Ta (°C) Pc – Ta 0.2 1.0 0 160 0.6 20 80 100 0 40 120 60 140 0.4 0.8 DC Operation Ta = 25°C Mounted on an FR4 board glass epoxy, 1.6 mm thick, Cu area: 645 mm 2) (1) Single-device operation (2) Single-device value at dual operation (2) (1) (2) |
类似零件编号 - TPCP8701 |
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类似说明 - TPCP8701 |
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