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TPCP8404 数据表(PDF) 3 Page - Toshiba Semiconductor |
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TPCP8404 数据表(HTML) 3 Page - Toshiba Semiconductor |
3 / 11 page TPCP8404 2010-02-01 3 P-ch Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cut-off current IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 20 V −10 ⎯ ⎯ V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 ⎯ −2.0 V VGS = −4.5 V, ID = −2.0 A ⎯ 58 80 Drain-source ON resistance RDS (ON) VGS = −10 V, ID = −2.0 A ⎯ 38 50 m Ω Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.0 A 3.7 7.3 ⎯ S Input capacitance Ciss ⎯ 510 ⎯ Reverse transfer capacitance Crss ⎯ 110 ⎯ Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 170 ⎯ pF Rise time tr ⎯ 11 ⎯ Turn-on time ton ⎯ 20 ⎯ Fall time tf ⎯ 37 ⎯ Switching time Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 99 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 13 ⎯ Gate-source charge 1 Qgs1 ⎯ 1.7 ⎯ Gate-drain (“miller”) charge Qgd VDD ≈ −24 V, VGS = −10 V, ID = −4 A ⎯ 4.6 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ −16 A Forward voltage (diode) VDSF IDR = −4 A, VGS = 0 V ⎯ ⎯ 1.2 V VDD ≈ −15 V −10 V 0 V ID = −2 A VOUT |
类似零件编号 - TPCP8404 |
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类似说明 - TPCP8404 |
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