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STP18N55M5 数据表(PDF) 5 Page - STMicroelectronics |
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STP18N55M5 数据表(HTML) 5 Page - STMicroelectronics |
5 / 22 page STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Electrical characteristics Doc ID 17078 Rev 2 5/22 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(off) tr tc tf Turn-off delay time Rise time Cross time Fall time VDD = 400 V, ID = 9 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18, Figure 23) - 29 9.5 23 13 - ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 13 52 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 13 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 13 A, di/dt = 100 A/µs VDD = 100 V (see Figure 20) - 238 2.8 23.5 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 13 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 20) - 278 3.3 24 ns µC A |
类似零件编号 - STP18N55M5 |
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类似说明 - STP18N55M5 |
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