BC847BDW1T3G datasheet(2/11 Pages) ONSEMI

部件名	BC847BDW1T3G

功能描述	Dual General Purpose Transistors

Download	11 Pages

Scroll/Zoom	100%

制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

标志

2 / 11 page

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,

NSVBC847BDW1T2G, BC848CDW1T1G

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 10 mA)

BC846, SBC846 Series

BC847, SBC847 Series, NSVBC847

BC848 Series

V(BR)CEO

65

45

30

−

V

Collector−Emitter Breakdown Voltage

(IC = 10 mA, VEB = 0)

BC846, SBC846 Series

BC847, SBC847 Series, NSVBC847

BC848 Series

V(BR)CES

80

50

30

−

V

Collector−Base Breakdown Voltage

(IC = 10 mA)

BC846, SBC846 Series

BC847, SBC847 Series, NSVBC847

BC848 Series

V(BR)CBO

80

50

30

−

V

Emitter−Base Breakdown Voltage

(IE = 1.0 mA)

BC846, SBC846 Series

BC847, SBC847 Series, NSVBC847

BC848 Series

V(BR)EBO

6.0

5.0

−

V

Collector Cutoff Current

(VCB = 30 V)

(VCB = 30 V, TA = 150°C)

ICBO

−

15

5.0

nA

mA

ON CHARACTERISTICS

DC Current Gain

(IC = 10 mA, VCE = 5.0 V)

BC846B, SBC846B, BC847B, SBC847B, NSVBC847

BC847C, SBC847C, BC848C

(IC = 2.0 mA, VCE = 5.0 V)

BC846B, SBC846B, BC847B, SBC847B, NSVBC847

BC847C, SBC847C, BC848C

hFE

−

200

420

150

270

290

520

−

450

800

−

Collector−Emitter Saturation Voltage

(IC = 10 mA, IB = 0.5 mA)

(IC = 100 mA, IB = 5.0 mA)

VCE(sat)

−

0.25

0.6

V

Base −Emitter Saturation Voltage

(IC = 10 mA, IB = 0.5 mA)

(IC = 100 mA, IB = 5.0 mA)

VBE(sat)

−

0.7

0.9

−

V

Base −Emitter Voltage

(IC = 2.0 mA, VCE = 5.0 V)

(IC = 10 mA, VCE = 5.0 V)

VBE(on)

580

−

660

−

700

770

mV

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)

fT

100

−

MHz

Output Capacitance

(VCB = 10 V, f = 1.0 MHz)

Cobo

−

4.5

pF

Noise Figure

(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)

NF

−

10

dB

类似零件编号 - BC847BDW1T3G

制造商	部件名	数据表	功能描述
ON Semiconductor	BC847BDW1T3G	133Kb / 10P	Dual General Purpose Transistors July, 2010 ??Rev. 7
ON Semiconductor	BC847BDW1T3G	110Kb / 11P	Dual General Purpose Transistors August, 2016 ??Rev. 11

More results

类似说明 - BC847BDW1T3G

制造商	部件名	数据表	功能描述
Rohm	EMX26	82Kb / 4P	General purpose transistors (dual transistors)
Shenzhen Jin Yu Semicon...	UMF5	616Kb / 2P	General purpose transistors (dual transistors)
Shenzhen Jin Yu Semicon...	UMG3N	1Mb / 1P	General purpose transistors (dual transistors)
Rohm	EMX18	82Kb / 4P	General purpose transistors (dual transistors)
Shenzhen Jin Yu Semicon...	EMH2	318Kb / 1P	General purpose transistors (dual transistors)
Shenzhen Jin Yu Semicon...	UMH10N	297Kb / 1P	General purpose transistors (dual transistors)
Rohm	EMT18	716Kb / 4P	General purpose transistors(dual transistors)
Rohm	IMX1T110	93Kb / 4P	General purpose transistors(dual transistors)
Shenzhen Jin Yu Semicon...	UMB3N	508Kb / 1P	General purpose transistors (dual transistors)
Rohm	EMT18	78Kb / 4P	General purpose transistors (dual transistors)
Shenzhen Jin Yu Semicon...	EMD12	709Kb / 2P	General purpose transistors (dual transistors)