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SI8430AB-C-IS1 数据表(PDF) 4 Page - Silicon Laboratories |
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SI8430AB-C-IS1 数据表(HTML) 4 Page - Silicon Laboratories |
4 / 38 page Si8430/31/35 4 Rev. 1.5 1. Electrical Specifications Table 1. Recommended Operating Conditions Parameter Symbol Test Condition Min Typ Max Unit Ambient Operating Temperature* TA 150 Mbps, 15 pF, 5 V –40 25 125* °C Supply Voltage VDD1 2.70 — 5.5 V VDD2 2.70 — 5.5 V *Note: The maximum ambient temperature is dependent on data frequency, output loading, number of operating channels, and supply voltage. Table 2. Absolute Maximum Ratings1 Parameter Symbol Min Typ Max Unit Storage Temperature2 TSTG –65 — 150 °C Operating Temperature TA –40 — 125 °C Supply Voltage (Revision C)3 VDD1, VDD2 –0.5 — 5.75 V Supply Voltage (Revision D)3 VDD1, VDD2 –0.5 — 6.0 V Input Voltage VI –0.5 — VDD + 0.5 V Output Voltage VO –0.5 — VDD + 0.5 V Output Current Drive Channel IO —— 10 mA Lead Solder Temperature (10 s) — — 260 °C Maximum Isolation Voltage (1 s) — — 3600 VRMS Notes: 1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be restricted to conditions as specified in the operational sections of this data sheet. 2. VDE certifies storage temperature from –40 to 150 °C. 3. See "5. Ordering Guide" on page 27 for more information. |
类似零件编号 - SI8430AB-C-IS1 |
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类似说明 - SI8430AB-C-IS1 |
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