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SI8606AD-B-IS 数据表(PDF) 11 Page - Silicon Laboratories |
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SI8606AD-B-IS 数据表(HTML) 11 Page - Silicon Laboratories |
11 / 40 page Rev. 1.2 11 Si860x Table 9. IEC 60747-5-2 Insulation Characteristics for Si86xxxx* Parameter Symbol Test Condition Characteristic Unit WB SOIC-16 NB SOIC-8 SOIC-16 Maximum Working Insulation Voltage VIORM 1200 630 Vpeak Input to Output Test Voltage VPR Method b1 (VIORM x1.875 =VPR, 100% Production Test, tm = 1 sec, Partial Discharge < 5 pC) 2250 1182 Vpeak Transient Overvoltage VIOTM t = 60 sec 6000 6000 Vpeak Pollution Degree (DIN VDE 0110, Table 1) 22 Insulation Resistance at TS, VIO =500 V RS >109 >109 *Note: Maintenance of the safety data is ensured by protective circuits. The Si86xxxx provides a climate classification of 40/125/21. Table 10. IEC Safety Limiting Values1 Parameter Symbol Test Condition NB SOIC-8 NB SOIC-16 WB SOIC-16 Unit Case Temperature TS 150 150 150 °C Safety Input Current IS JA = 100 °C/W (WB SOIC-16), 105 °C/W (NB SOIC-16), 140 °C/W (NB SOIC-8) AVDD, BVDD = 5.5 V, TJ =150 °C, TA =25°C 160 210 220 mA Device Power Dissipation2 PD 220 275 275 W Notes: 1. Maximum value allowed in the event of a failure. Refer to the thermal derating curve in Figures 3, 4, and 5. 2. The Si86xx is tested with AVDD, BVDD = 5.5 V; TJ =150 ºC; C1, C2 =0.1 µF; C3 = 15 pF; R1, R2 = 3kinput 1 MHz 50% duty cycle square wave. |
类似零件编号 - SI8606AD-B-IS |
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类似说明 - SI8606AD-B-IS |
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