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STP36NF06 数据表(PDF) 3 Page - STMicroelectronics |
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STP36NF06 数据表(HTML) 3 Page - STMicroelectronics |
3 / 14 page STP36NF06 - STP36NF06FP Electrical ratings 3/14 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit TO-220 TO-220FP VDS Drain-source voltage (VGS = 0) 60 V VGS Gate- source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 30 18(1) 1. Current limited by package’s thermal resistance A ID Drain current (continuous) at TC = 100°C 21 12(1) A IDM (2) 2. Pulse width limited by safe operating area. Drain current (pulsed) 120 72 A Ptot Total dissipation at TC = 25°C 70 25 W Derating factor 0.47 0.17 W/°C dv/dt (3) 3. ISD ≤36A, di/dt ≤400A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX Peak diode recovery voltage slope 20 V/ns EAS (4) 4. Starting Tj = 25 °C, ID = 18A, VDD = 45V Single pulse avalanche energy 200 mJ VISO Insulation withstand voltage three leads to external heat (t = 1s; Tc = 25°C) -- 2500 V Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature Table 2. Thermal data TO-220 TO-220FP Rthj-case Thermal resistance junction-case max 2.14 6 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W TJ Maximum lead temperature for soldering purpose(1) 1. 1.6 mm from case, for 10 sec. 300 °C |
类似零件编号 - STP36NF06_07 |
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类似说明 - STP36NF06_07 |
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