ML4800

REV. 1.0.2 3/7/2001

3

ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

VOLTAGE ERROR AMPLIFIER

Input Voltage Range

0

5

V

Transconductance

30

65

90

µ

Feedback Reference Voltage

2.43

2.5

2.57

V

Input Bias Current

Note 2

-0.5

-1.0

µA

Output High Voltage

6.0

6.7

V

Output Low Voltage

0.1

0.4

V

Source Current

-40

-140

µA

Sink Current

40

140

µA

Open Loop Gain

50

60

dB

Power Supply Rejection Ratio

50

60

dB

CURRENT ERROR AMPLIFIER

Input Voltage Range

-1.5

2

V

Transconductance

50

100

150

µ

Input Offset Voltage

0

4

15

mV

Input Bias Current

-0.5

-1.0

µA

Output High Voltage

6.0

6.7

V

Output Low Voltage

0.65

1.0

V

Source Current

-40

-104

µA

Sink Current

40

160

µA

Open Loop Gain

60

70

dB

Power Supply Rejection Ratio

60

75

dB

OVP COMPARATOR

Threshold Voltage

2.65

2.75

2.85

V

Hysteresis

175

250

325

mV

ABSOLUTE MAXIMUM RATINGS

Absolute maximum ratings are those values beyond which

the device could be permanently damaged. Absolute

maximum ratings are stress ratings only and functional

device operation is not implied.

Peak PFC OUT Current, Source or Sink ....................... 1A

Peak PWM OUT Current, Source or Sink .................... 1A

PFC OUT, PWM OUT Energy Per Cycle ................... 1.5

µJ

Junction Temperature .............................................. 150

°C

Storage Temperature Range ...................... -65

°C to 150°C

Lead Temperature (Soldering, 10 sec) ..................... 260

°C

Thermal Resistance (

Plastic DIP .......................................................... 80

°C/W

Plastic SOIC ...................................................... 105

°C/W

OPERATING CONDITIONS

Temperature Range

ML4800CX .................................................... 0

°C to 70°C

ML4800IX .................................................. -40

°C to 85°C