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FDD7N25LZTM 数据表(PDF) 2 Page - Fairchild Semiconductor |
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FDD7N25LZTM 数据表(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page ©2010 Fairchild Semiconductor Corporation FDD7N25LZ Rev. C0 www.fairchildsemi.com 2 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDD7N25LZ FDD7N25LZ D-PAK 380mm 16mm 2500 Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V, TC = 25 oC 250 - - V BV DSS T J Breakdown Voltage Temperature Coefficient ID = 250A, Referenced to 25 oC - 0.25 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V - - 1 A VDS = 200V, TC = 125 oC- - 10 IGSSF Gate to Body Leakage Current, Forward VGS = 20V, VDS = 0V - - 10 A IGSSR Gate to Body Leakage Current, Reverse VGS = -20V, VDS = 0V - - -10 A VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250A1.0 - 2.0 V RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 3.1A - 0.43 0.55 VGS = 5V, ID = 3.1A - 0.45 0.57 gFS Forward Transconductance VDS = 20V, ID = 3.1A - 7 - S Ciss Input Capacitance VDS = 25V, VGS = 0V f = 1MHz - 480 635 pF Coss Output Capacitance - 65 85 pF Crss Reverse Transfer Capacitance - 8 12 pF Qg(tot) Total Gate Charge at 10V VDS = 250V ID = 6.2A VGS = 10V (Note 4) -12 16 nC Qgs Gate to Source Gate Charge - 1.5 - nC Qgd Gate to Drain “Miller” Charge - 4 - nC td(on) Turn-On Delay Time VDD = 250V, ID = 6.2A VGS = 10V, RG = 25 (Note 4) -10 30 ns tr Turn-On Rise Time - 15 40 ns td(off) Turn-Off Delay Time - 75 160 ns tf Turn-Off Fall Time - 30 70 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 5.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 20 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 6.2A - - 1.4 V trr Reverse Recovery Time VGS = 0V, ISD = 6.2A dIF/dt = 100A/s - 130 - ns Qrr Reverse Recovery Charge - 0.6 - C Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 6mH, IAS = 6.2A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 6.2A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Essentially Independent of Operating Temperature Typical Characteristics |
类似零件编号 - FDD7N25LZTM |
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类似说明 - FDD7N25LZTM |
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