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FDD7N25LZTM 数据表(PDF) 2 Page - Fairchild Semiconductor

部件名 FDD7N25LZTM
功能描述  N-Channel UniFET MOSFET
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
标志 FAIRCHILD - Fairchild Semiconductor

FDD7N25LZTM 数据表(HTML) 2 Page - Fairchild Semiconductor

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©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. C0
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics T
C = 25
oC unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD7N25LZ
FDD7N25LZ
D-PAK
380mm
16mm
2500
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain to Source Breakdown Voltage
ID = 250A, VGS = 0V, TC = 25
oC
250
-
-
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
ID = 250A, Referenced to 25
oC
-
0.25
-
V/oC
IDSS
Zero Gate Voltage Drain Current
VDS = 250V, VGS = 0V
-
-
1
A
VDS = 200V, TC = 125
oC-
-
10
IGSSF
Gate to Body Leakage Current, Forward
VGS = 20V, VDS = 0V
-
-
10
A
IGSSR
Gate to Body Leakage Current, Reverse
VGS = -20V, VDS = 0V
-
-
-10
A
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250A1.0
-
2.0
V
RDS(on)
Static Drain to Source On Resistance
VGS = 10V, ID = 3.1A
-
0.43
0.55
VGS = 5V, ID = 3.1A
-
0.45
0.57
gFS
Forward Transconductance
VDS = 20V, ID = 3.1A
-
7
-
S
Ciss
Input Capacitance
VDS = 25V, VGS = 0V
f = 1MHz
-
480
635
pF
Coss
Output Capacitance
-
65
85
pF
Crss
Reverse Transfer Capacitance
-
8
12
pF
Qg(tot)
Total Gate Charge at 10V
VDS = 250V ID = 6.2A
VGS = 10V
(Note 4)
-12
16
nC
Qgs
Gate to Source Gate Charge
-
1.5
-
nC
Qgd
Gate to Drain “Miller” Charge
-
4
-
nC
td(on)
Turn-On Delay Time
VDD = 250V, ID = 6.2A
VGS = 10V, RG = 25
(Note 4)
-10
30
ns
tr
Turn-On Rise Time
-
15
40
ns
td(off)
Turn-Off Delay Time
-
75
160
ns
tf
Turn-Off Fall Time
-
30
70
ns
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
5.5
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
20
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 6.2A
-
-
1.4
V
trr
Reverse Recovery Time
VGS = 0V, ISD = 6.2A
dIF/dt = 100A/s
-
130
-
ns
Qrr
Reverse Recovery Charge
-
0.6
-
C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6mH, IAS = 6.2A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 6.2A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics


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