SI1470DH datasheet(4/7 Pages) VISHAY

部件名	SI1470DH

功能描述	N-Channel 30 V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Document Number: 74277

S10-0646-Rev. B, 22-Mar-10

Vishay Siliconix

Si1470DH

TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.01

1

10

1.0

0.1

0

0.2

0.4

0.6

0.8

1.2

T = 150 °C

J

T = 25 °C

J

VSD - Source-to-Drain Voltage (V)

0.5

0.7

0.9

1.1

1.3

1.5

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

RDS(on) vs. VGS vs. Temperature

Single Pulse Power

0.00

0.04

0.08

0.12

0.16

012345

VGS - Gate-to-Source Voltage (V)

TA = 25 °C

TA = 125 °C

ID = 3.7 A

0

20

30

5

15

Time (s)

25

1

600

100

0.001

0.1

10

0.01

10

Safe Operating Area, Junction-to-Ambient

100

0.001

10

0.01

0.1

100

10

1

0.1

1

TA = 25 °C

Single Pulse

Limited by RDS(on)*

10 ms

100 ms

1 s

10 s

DC

VDS - Drain-to-Source Voltage (V)

*V GS > minimum VGS at which RDS(on) is specified

类似零件编号 - SI1470DH

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI1470DH	114Kb / 7P	N-Channel 30-V (D-S) MOSFET Rev. A, 27-Nov-06
	SI1470DH	117Kb / 7P	N-Channel 30 V (D-S) MOSFET Rev. B, 22-Mar-10
	SI1470DH-T1-E3	114Kb / 7P	N-Channel 30-V (D-S) MOSFET Rev. A, 27-Nov-06
	SI1470DH	117Kb / 7P	N-Channel 30 V (D-S) MOSFET Rev. B, 22-Mar-10

More results

类似说明 - SI1470DH

制造商	部件名	数据表	功能描述
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	SI4894DY	129Kb / 3P	N-Channel 30-V (D-S) MOSFET 17-May-04
	SI4406DY	38Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. C, 26-May-03
	SI7380DP	180Kb / 3P	N-Channel 30-V (D-S) MOSFET 24-May-04
	SI733ADP	61Kb / 5P	N-Channel 30-V (D-S) MOSFET Rev. A, 25-Oct-04
	SI4892DY	71Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. F, 01-Aug-05
Vaishali Semiconductor	SI4356ADY	143Kb / 3P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SIRA00DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA04DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA14DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 12-Mar-12