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STP130N10F3 数据表(PDF) 5 Page - STMicroelectronics |
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STP130N10F3 数据表(HTML) 5 Page - STMicroelectronics |
5 / 23 page STF130N10F3, STFI130N10F3, STH130N10F3-2, STP130N10F3 Electrical characteristics Doc ID 018492 Rev 3 5/23 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) For TO-220FP and I²PAKFP - 46 184 A A ISD ISDM (2) 2. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) For TO-220, H²PAK-2 - 120 450 A A VSD (3) 3. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD=120 A, VGS=0; for TO-220, H²PAK-2 -1.5 V ISD=46 A, VGS=0; for TO-220FP and I²PAKFP trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120 A, di/dt = 100 A/µs, VDD=80 V, Tj=150 °C (see Figure 21) - 68 182 5.4 ns nC A |
类似零件编号 - STP130N10F3 |
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类似说明 - STP130N10F3 |
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