STP130N10F3 datasheet(5/23 Pages) STMICROELECTRONICS

部件名	STP130N10F3

功能描述	N-channel 100 V, 7.8 m廓 typ., 120 A STripFET?줚II Power MOSFET in TO-220FP, I짼PAKFP, H짼PAK-2 and TO-220 packages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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5 / 23 page

STF130N10F3, STFI130N10F3, STH130N10F3-2, STP130N10F3

Electrical characteristics

Doc ID 018492 Rev 3

5/23

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

(pulsed)

For TO-220FP and

I²PAKFP

-

46

184

A

ISD

ISDM

(2)

2.

Pulse width limited by safe operating area

Source-drain current

(pulsed)

For TO-220, H²PAK-2

-

120

450

A

VSD

(3)

3.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD=120 A, VGS=0; for

TO-220, H²PAK-2

-1.5

V

ISD=46 A, VGS=0; for

TO-220FP and

I²PAKFP

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=120 A,

di/dt = 100 A/µs,

VDD=80 V, Tj=150 °C

(see Figure 21)

-

68

182

5.4

ns

nC

A

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