KSB907 datasheet(1/4 Pages) FAIRCHILD

部件名	KSB907

功能描述	Power Amplifier Applications

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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Rev. A, February 2000

PNP Silicon Darlington Transistor

Absolute Maximum Ratings T

C=25°C unless otherwise noted

Electrical Characteristics T

C=25°C unless otherwise noted

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

- 60

V

VCEO

Collector-Emitter Voltage

- 40

V

VEBO

Emitter-Base Voltage

- 5

V

IC

Collector Current(DC)

- 3

A

IB

Base Current

- 0.3

A

PC

Collector Dissipation (Ta=25°C)

15

W

PC

Collector Dissipation (TC=25°C)

1

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

- 55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BVCEO

Collector- Emitter Breakdown Voltage

IC = - 25mA, IB = 0

- 40

V

ICBO

Collector Cut-off Current

VCB = - 60V, IE = 0

- 20

µA

IEBO

Emitter Cut-off Current

VEB = - 5V, IC = 0

- 2.5

µA

hFE1

hFE2

DC Current Gain

VCE = - 2V, IC = - 1A

VCE = - 2V, IC = - 3A

2000

1000

VCE(sat)

Collector-Emitter Saturation Voltage

IC = - 2A, IB = - 4mA

- 1.5

V

VBE(sat)

Base-Emitter Saturation Voltage

IC = - 2A, IB = - 4mA

- 2

V

tON

Turn ON Time

VCC = - 30V, IC = - 3A

IB1 = - IB2 = - 6mA

RL = 10Ω

0.3

µs

tSTG

Storage Time

0.6

µs

tF

Fall Time

0.25

µs

KSB907

Power Amplifier Applications

• High DC Current Gain

• Low Collector-Emitter Saturation Voltage

• Built-in Damper Diode at E-C

• Darlington TR

• Complement to KSD1222

1. Base 2. Collector 3. Emitter

I-PACK

1

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