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BDX34C 数据表(PDF) 1 Page - Comset Semiconductor |
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BDX34C 数据表(HTML) 1 Page - Comset Semiconductor |
1 / 4 page PNP BDX34 – BDX34A – BDX34B – BDX34C 23/10/2012 COMSET SEMICONDUCTORS 1/4 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX34B, BDX34B and BDX34C are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary NPN types are the BDX33A, BDX33B and BDX33C respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage IB=0 BDX34 -45 V BDX34A -60 BDX34B -80 BDX34C -100 VCBO Collector-Base Voltage IE=0 BDX34 -45 V BDX34A -60 BDX34B -80 BDX34C -100 IC Collector Current IC(RMS) -10 A ICM -15 IB Base Current -0.25 A PT Power Dissipation @ TC = 25° 70 W TJ Junction Temperature -65 to +150 °C TS Storage Temperature THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1.78 °C/W |
类似零件编号 - BDX34C |
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类似说明 - BDX34C |
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