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2SA1365 数据表(PDF) 1 Page - Isahaya Electronics Corporation |
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2SA1365 数据表(HTML) 1 Page - Isahaya Electronics Corporation |
1 / 3 page DESCRIPTION 2SA1235 is a super mini silicon NPN epitaxial type transistor designed with high collector current,small Vce(sat). Complementary with 2SC3440. . FEATURE ●Low collector to emitter saturation voltage. VCE(sat)=-0.2V typ ●Excellent linearity of DC forward current gain. ●Super mini package for easy mounting. ●High collector current ICM=-1A ●High gain band width product fT=180MHz typ APPLICATION Small type motor drive, relay drive, power supply. Marking AE AF AG hFE 150 to 300 250 to 500 400 to 800 . 〈SMALL-SIGNAL TRANSISTOR〉 2SA1365 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING Unit:mm Note) The dimension without tolerance represent central value . MAXIMUM RATINGS(Ta=25℃) Symbol Parameter Ratings Unit V CBO Collector to Base voltage -25 V V EBO Emitter to Base voltage -4 V V CEO Collector to Emitter voltage -20 V I CM Peak Collector current -1 A I C Collector current -700 mA 200 P C Collector dissipation (Ta=25℃) ※350 mW T j Junction temperature +125 ℃ T stg Storage temperature -55~+125 ℃ ※ package mounted on substrate. ELECTRICAL CHARACTERISTICS(Ta=25℃) Limits Parameter Symbol Test conditions Min Typ Max Unit C to B break down voltage V(BR)CBO I C=-10μA , I E=0 -25 - - V E to B break down voltage V(BR)EBO I E=-10μA , I C=0 -4 - - V C to E break down voltage V(BR)CEO I C=-100μA ,R BE=∞ -20 - - V Collector cut off current ICBO V CB=-25V, I E=0 - - -1 μA Emitter cut off current IEBO V EB=-2V, I C=0 - - -1 μA DC forward current gain hFE V CE=-4V, I C=-100mA 150 - 800 C to E Saturation Vlotage VCE(sat) I C=-500mA ,IB=-25mA - -0.2 -0.5 V Gain band width product fT V CE=-6V, I E=10mA 100 180 - MHz ※) It shows hFE classification in below table JEITA:SC-59 JEDEC:Similar to TO-236 TERMINAL CONNECTER ①:BASE ②:EMITTER ③:COLLECTOR ISAHAYA ELECTRONICS CORPORATION TYPE NAME hFE ITEM |
类似零件编号 - 2SA1365_10 |
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类似说明 - 2SA1365_10 |
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