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KA5S0965YDTU 数据表(PDF) 7 Page - Fairchild Semiconductor |
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KA5S0965YDTU 数据表(HTML) 7 Page - Fairchild Semiconductor |
7 / 20 page KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/ 7 Electrical Characteristics (SFET Part; Continued) (Ta = 25 °C unless otherwise specified) Note: 1. Pulse Test : Pulse width ≤ 300uS, Duty Cycle ≤ 2% 2.MOSFET Switching Time are Essentially Independent of Operating Temperature 3. Parameter Symbol Conditions Min. Typ. Max. Unit KA5S1265 Drain-source breakdown voltage BVDSS VGS=0V, ID=50 µA 650 - - V Zero gate voltage drain current IDSS VDS=Max., Rating, VGS=0V - - 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125 °C - - 200 µA Static drain-source on resistance(1) RDS(on) VGS=10V, ID=6.0A - 0.72 0.9 Ω Forward transconductance(1) gfs VDS=50V, ID=4.0A 5.7 - - S Input capacitance Ciss VGS=0V, VDS=25V, f = 1MHz - 2700 - pF Output capacitance Coss - 300 - Reverse transfer capacitance Crss - 61 - Turn on delay time td(on) VDD=0.5BVDSS, ID=12.0A (MOSFET switching time are essentially independent of operating temperature) -18 - nS Rise time tr - 37 - Turn off delay time td(off) - 88 - Fall time tf - 36 - Total gate charge (gate-source+gate-drain) Qg VGS=10V, ID=12.0A, VDS=0.5BVDSS(MOSFET Switching time are Essentially independent of Operating temperature) - - 140 nC Gate-source charge Qgs - 20 - Gate-drain (Miller) charge Qgd - 69 - S 1 R ---- = |
类似零件编号 - KA5S0965YDTU |
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类似说明 - KA5S0965YDTU |
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