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2N3227 数据表(PDF) 1 Page - Comset Semiconductor |
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2N3227 数据表(HTML) 1 Page - Comset Semiconductor |
1 / 3 page NPN 2N3227 16/10/2012 COMSET SEMICONDUCTORS 1/3 SILICON ANNULAR TRANSISTORS The 2N3227 are silicon NPN silicon annular transistors for low-current, high-speed switching applications. They are mounted in Jedec TO-18 metal. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V VCES Collector-Emitter Voltage 40 V IC (peak) Collector Current 500 mA PD Total Device Dissipation Ambient Temperature @ TC = 25° 0.36 Watts Derating Factore Above 2.06 mW/°C PD Total Device Dissipation Case Temperature @ TC = 25° 1.2 Watts Derating Factore Above 6.85 mW/°C TJ Junction Temperature +200 °C TStg Storage Temperature range -65 to +200 |
类似零件编号 - 2N3227_12 |
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类似说明 - 2N3227_12 |
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