DATA SHEET

SEMICONDUCTOR

http://www.yeashin.com

1

REV.02 20130305

W005M THRU W10M

SINGLE-PHAS

E SILICON BRIDGE

+

WOM

All Dimensions in millimeter

WOG

DIM.

MIN.

MAX.

A

C

D

E

F

B

8.90

9.30

25.4

27.9

5.60

5.10

0.70

0.80

4.60

5.60

A

C

D

E

F

B

F

FEATURES

Rating to 1000V PRV

Ideal for printed circuit board

Low forward voltage drop, high current capability.

Reliable low cost construction utilizing molded epoxy

technique results in inexpensive product

The plastic material has UL flammability classification

94V-0

MECHANICAL DATA

Case : Molded plastic

Polarity: As marked on Body

Weight : 0.05 ounces, 1.42grams

Mounting position : Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

W005M

NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2.Thermal Resistance Junction to Ambient

@TA=25 C

Maximum Average Forward

Rectified Current

Peak Forward Surge Current

8.3ms single half sine-wave

superimposed on rated load (JEDEC METHOD)

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum forward Voltage at 1.0A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Typical Junction Capacitance

per element (Note 1)

1.5

50

1.0

5.0

500

20

Operating Temperature Range

-55 to +150

C

Storage Temperature Range

-55 to +150

Typical Thermal Resistance (Note 2)

36

C/W

pF

uA

V

A

A

UNIT

CHARACTERISTICS

SYMBOL

I

A

I

10.4

50

35

50

100

70

100

W02M

200

140

200

400

280

400

W06M

600

420

600

W08M

800

560

800

W10M

1000

700

1000

W01M

W04M

V

V

V

C