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KA1M0280RB-YDTU 数据表(PDF) 2 Page - Fairchild Semiconductor |
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KA1M0280RB-YDTU 数据表(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page KA1M0280RB/KA1H0280RB 2 Absolute Maximum Ratings Notes: 1. Tj = 25 °C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L = 51mH, VDD = 50V, RG = 25 Ω, starting Tj = 25°C 4. L = 13 µH, starting Tj = 25°C Parameter Symbol Value Unit Maximum Drain Voltage (1) VD,MAX 800 V Drain-Gate Voltage (RGS=1M Ω)VDGR 800 V Gate-Source (GND) Voltage VGS ±30 V Drain Current Pulsed (2) IDM 8.0 ADC Single Pulsed Avalanche Energy (3) EAS 90 mJ Avalanche Current (4) IAS 8A Continuous Drain Current (TC=25 °C) ID 2.0 ADC Continuous Drain Current (TC=100 °C) ID 1.3 ADC Maximum Supply Voltage VCC,MAX 30 V Input Voltage Range VFB -0.3 to VSD V Total Power Dissipation PD 35 W Darting 0.28 W/ °C Operating Ambient Temperature TA -25 to +85 °C Storage Temperature TSTG -55 to +150 °C |
类似说明 - KA1M0280RB-YDTU |
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