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IRF3546MTRPBF 数据表(PDF) 4 Page - International Rectifier |
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IRF3546MTRPBF 数据表(HTML) 4 Page - International Rectifier |
4 / 18 page IRF3546 60A Dual Integrated Power Block www.irf.com | © 2013 International Rectifier May 29, 2013 | Final 4 PIN DESCRIPTIONS PIN # PIN NAME PIN DESCRIPTION 1, 40, 41 VIN1 High current input supply pads. Connected to Drains of Q1. Recommended operating range is 4.5V to 21V. Connect at least two 10uF 1206 ceramic capacitors and a 0.1uF 0402 ceramic capacitor. Place the capacitors as close as possible to VIN1 pins (40 and 41) and PGND pins (38 and 39). The 0.1uF 0402 capacitor should be on the same side of the PCB as the IRF3546. 2-6, 10-14 No Connect No connects. These pins can be connected to the VIN planes to reduce PCB trace resistances. 7 GATEH1 Gate connection of the Channel 1 control MOSFET Q1. 8, 19, 20, 38, 39, 42 PGND High current Power Ground. Connected to Sources of Q2 and Q4. Note all pads are internally connected in the package. Provide low resistance connections to the ground plane and respective output capacitors. 9 GATEH2 Gate connection of the Channel 2 control MOSFET Q3. 15-17 VIN2 High current input supply pads. Connected to Drains of Q3. Recommended operating range is 4.5V to 21V. Connect at least two 10uF 1206 ceramic capacitors and a 0.1uF 0402 ceramic capacitor. Place the capacitors as close as possible to VIN2 pins (16 and 17) and PGND pins (19 and 20). The 0.1uF 0402 capacitor should be on the same side of the PCB as the IRF3546. 18 GATEL2 Gate connection of the Channel 2 synchronous MOSFET Q4. 21-28 SW2 High Current Switch Node output for Channel 2. Connected to Source of Q3 and Drain of Q4. 29-36 SW1 High Current Switch Node output for Channel 1. Connected to Source of Q1 and Drain of Q2. 37 GATEL1 Gate connection of the Channel 1 synchronous MOSFET Q2. |
类似零件编号 - IRF3546MTRPBF |
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类似说明 - IRF3546MTRPBF |
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