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IRF644 数据表(PDF) 1 Page - Fairchild Semiconductor |
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IRF644 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page ©2001 Fairchild Semiconductor Corporation November 2001 Rev. A, November 2001 IRF644B/IRFS644B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies. Features • 14A, 250V, RDS(on) = 0.28Ω @VGS = 10 V • Low gate charge ( typical 47 nC) • Low Crss ( typical 30 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter IRF644B IRFS644B Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 14 14 * A - Continuous (TC = 100°C) 8.9 8.9 * A IDM Drain Current - Pulsed (Note 1) 56 56 * A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 480 mJ IAR Avalanche Current (Note 1) 14 A EAR Repetitive Avalanche Energy (Note 1) 13.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25°C) 139 43 W - Derate above 25°C 1.11 0.35 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter IRF644B IRFS644B Units RθJC Thermal Resistance, Junction-to-Case Max. 0.9 2.89 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W TO-220 IRF Series G S D S D G TO-220F IRFS Series G S D |
类似零件编号 - IRF644 |
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类似说明 - IRF644 |
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