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IRF630B 数据表(PDF) 4 Page - Fairchild Semiconductor |
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IRF630B 数据表(HTML) 4 Page - Fairchild Semiconductor |
4 / 10 page ©2002 Fairchild Semiconductor Corporation Rev. B, December 2002 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 100 µs 1 ms DC 100 ms 10 ms Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse V DS, Drain-Source Voltage [V] 25 50 75 100 125 150 0 2 4 6 8 10 T C , Case Temperature [℃] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 DC 10 ms 1 ms 100 µs Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse V DS, Drain-Source Voltage [V] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. V GS = 10 V 2. I D = 4.5 A T J, Junction Temperature [ o C] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※Notes: 1. V GS = 0 V 2. I D = 250 μ A T J, Junction Temperature [ o C] Typical Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Figure 9-1. Maximum Safe Operating Area for IRF630B Figure 10. Maximum Drain Current vs Case Temperature Figure 9-2. Maximum Safe Operating Area for IRFS630B |
类似零件编号 - IRF630B |
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类似说明 - IRF630B |
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