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HUFA76645S3S 数据表(PDF) 4 Page - Fairchild Semiconductor |
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HUFA76645S3S 数据表(HTML) 4 Page - Fairchild Semiconductor |
4 / 10 page ©2002 Fairchild Semiconductor Corporation HUFA76645P3, HUFA76645S3S Rev. B FIGURE 5. FORWARD BIAS SAFE OPERATING AREA NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 10. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE Typical Performance Curves (Continued) 10 100 1 10 100 300 1 500 100 µs 10ms 1ms VDS, DRAIN TO SOURCE VOLTAGE (V) LIMITED BY rDS(ON) AREA MAY BE OPERATION IN THIS TJ = MAX RATED TC = 25 oC SINGLE PULSE 100 0.001 0.01 0.1 1 10 1 500 tAV, TIME IN AVALANCHE (ms) tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R = 0 If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] STARTING TJ = 25 oC STARTING TJ = 150 oC 25 50 75 100 125 150 1.5 2.0 2.5 3.0 3.5 4.0 0 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDD = 15V TJ = 175 oC TJ = 25 oC TJ = -55 oC 25 50 75 100 125 150 01 2 3 4 0 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 3V VGS = 3.5V VGS = 5V VGS = 10V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX TC = 25 oC VGS = 4V 15 20 25 246 8 10 10 ID = 20A VGS, GATE TO SOURCE VOLTAGE (V) ID = 75A ID = 50A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX TC = 25 oC 1.0 1.5 2.0 2.5 3.0 -80 -40 0 40 80 120 160 200 0.5 TJ, JUNCTION TEMPERATURE ( oC) VGS = 10V, ID = 75A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX HUFA76645P3, HUFA76645S3S |
类似零件编号 - HUFA76645S3S |
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类似说明 - HUFA76645S3S |
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