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HUFA76407DK8T 数据表(PDF) 2 Page - Fairchild Semiconductor

部件名 HUFA76407DK8T
功能描述  3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
标志 FAIRCHILD - Fairchild Semiconductor

HUFA76407DK8T 数据表(HTML) 2 Page - Fairchild Semiconductor

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©2001 Fairchild Semiconductor Corporation
HUFA76407DK8 Rev. B
Electrical Specifications
TA = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V (Figure 12)
60
-
-
V
ID = 250µA, VGS = 0V , TA = -40
oC (Figure 12)
55
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 55V, VGS = 0V
-
-
1
µA
VDS = 50V, VGS = 0V, TA = 150
oC
-
-
250
µA
Gate to Source Leakage Current
IGSS
VGS = ±16V
-
-
±100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA (Figure 11)
1
-
3
V
Drain to Source On Resistance
rDS(ON)
ID = 3.8A, VGS = 10V (Figures 9, 10)
-
0.075
0.090
ID = 1.0A, VGS = 5V (Figure 9)
-
0.088
0.105
ID = 1.0A, VGS = 4.5V (Figure 9)
-
0.092
0.110
THERMAL SPECIFICATIONS
Thermal Resistance Junction to
Ambient
RθJA
Pad Area = 0.76 in2 (490.3 mm2) (Note 2)
-
-
50
oC/W
Pad Area = 0.027 in2 (17.4 mm2) (Figure 23)
-
-
191
oC/W
Pad Area = 0.006 in2 (3.87 mm2) (Figure 23)
-
-
228
oC/W
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time
tON
VDD = 30V, ID = 1.0A
VGS = 4.5V, RGS = 27Ω
(Figures 15, 21, 22)
-
-
57
ns
Turn-On Delay Time
td(ON)
-8
-
ns
Rise Time
tr
-30-
ns
Turn-Off Delay Time
td(OFF)
-25-
ns
Fall Time
tf
-25-
ns
Turn-Off Time
tOFF
-
-
75
ns
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
VDD = 30V, ID = 3.8A
VGS = 10V,
RGS = 30Ω
(Figures 16, 21, 22)
-
-
24
ns
Turn-On Delay Time
td(ON)
-5
-
ns
Rise Time
tr
-11-
ns
Turn-Off Delay Time
td(OFF)
-46-
ns
Fall Time
tf
-31-
ns
Turn-Off Time
tOFF
-
-
116
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Qg(TOT)
VGS = 0V to 10V
VDD = 30V,
ID = 1.0A,
Ig(REF) = 1.0mA
(Figures 14, 19, 20)
-
9.4
11.2
nC
Gate Charge at 5V
Qg(5)
VGS = 0V to 5V
-
5.3
6.4
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 1V
-
0.42
0.5
nC
Gate to Source Gate Charge
Qgs
-1.05-
nC
Gate to Drain “Miller” Charge
Qgd
-2.4
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)
-
330
-
pF
Output Capacitance
COSS
-
100
-
pF
Reverse Transfer Capacitance
CRSS
-18-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
VSD
ISD = 3.8A
-
-
1.25
V
ISD = 1.0A
-
-
1.00
V
Reverse Recovery Time
trr
ISD = 1.0A, dISD/dt = 100A/µs-
-
48
ns
Reverse Recovered Charge
QRR
ISD = 1.0A, dISD/dt = 100A/µs-
-
89
nC
HUFA76407DK8


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