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HUFA76407DK8T 数据表(PDF) 2 Page - Fairchild Semiconductor |
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HUFA76407DK8T 数据表(HTML) 2 Page - Fairchild Semiconductor |
2 / 12 page ©2001 Fairchild Semiconductor Corporation HUFA76407DK8 Rev. B Electrical Specifications TA = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 12) 60 - - V ID = 250µA, VGS = 0V , TA = -40 oC (Figure 12) 55 - - V Zero Gate Voltage Drain Current IDSS VDS = 55V, VGS = 0V - - 1 µA VDS = 50V, VGS = 0V, TA = 150 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±16V - - ±100 nA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 11) 1 - 3 V Drain to Source On Resistance rDS(ON) ID = 3.8A, VGS = 10V (Figures 9, 10) - 0.075 0.090 Ω ID = 1.0A, VGS = 5V (Figure 9) - 0.088 0.105 Ω ID = 1.0A, VGS = 4.5V (Figure 9) - 0.092 0.110 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Ambient RθJA Pad Area = 0.76 in2 (490.3 mm2) (Note 2) - - 50 oC/W Pad Area = 0.027 in2 (17.4 mm2) (Figure 23) - - 191 oC/W Pad Area = 0.006 in2 (3.87 mm2) (Figure 23) - - 228 oC/W SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time tON VDD = 30V, ID = 1.0A VGS = 4.5V, RGS = 27Ω (Figures 15, 21, 22) - - 57 ns Turn-On Delay Time td(ON) -8 - ns Rise Time tr -30- ns Turn-Off Delay Time td(OFF) -25- ns Fall Time tf -25- ns Turn-Off Time tOFF - - 75 ns SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time tON VDD = 30V, ID = 3.8A VGS = 10V, RGS = 30Ω (Figures 16, 21, 22) - - 24 ns Turn-On Delay Time td(ON) -5 - ns Rise Time tr -11- ns Turn-Off Delay Time td(OFF) -46- ns Fall Time tf -31- ns Turn-Off Time tOFF - - 116 ns GATE CHARGE SPECIFICATIONS Total Gate Charge Qg(TOT) VGS = 0V to 10V VDD = 30V, ID = 1.0A, Ig(REF) = 1.0mA (Figures 14, 19, 20) - 9.4 11.2 nC Gate Charge at 5V Qg(5) VGS = 0V to 5V - 5.3 6.4 nC Threshold Gate Charge Qg(TH) VGS = 0V to 1V - 0.42 0.5 nC Gate to Source Gate Charge Qgs -1.05- nC Gate to Drain “Miller” Charge Qgd -2.4 - nC CAPACITANCE SPECIFICATIONS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) - 330 - pF Output Capacitance COSS - 100 - pF Reverse Transfer Capacitance CRSS -18- pF Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 3.8A - - 1.25 V ISD = 1.0A - - 1.00 V Reverse Recovery Time trr ISD = 1.0A, dISD/dt = 100A/µs- - 48 ns Reverse Recovered Charge QRR ISD = 1.0A, dISD/dt = 100A/µs- - 89 nC HUFA76407DK8 |
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