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CAT22C10LE20 数据表(PDF) 1 Page - ON Semiconductor |
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CAT22C10LE20 数据表(HTML) 1 Page - ON Semiconductor |
1 / 10 page 1 Doc. No. MD-1082, Rev. R © 2009 SCILLC. All rights reserved. Characteristics subject to change without notice. FEATURES s Single 5V Supply s Fast RAM Access Times: –200ns –300ns s Infinite EEPROM to RAM Recall s CMOS and TTL Compatible I/O s Power Up/Down Protection s 100,000 Program/Erase Cycles (E2PROM) s Low CMOS Power Consumption: –Active: 40mA Max. –Standby: 30 µA Max. s JEDEC Standard Pinouts: –18-lead DIP –16-lead SOIC s 10 Year Data Retention s Commercial, Industrial and Automotive Temperature Ranges DESCRIPTION The CAT22C10 NVRAM is a 256-bit nonvolatile memory organized as 64 words x 4 bits. The high speed Static RAM array is bit for bit backed up by a nonvolatile EEPROM array which allows for easy transfer of data from RAM array to EEPROM (STORE) and from EEPROM to RAM (RECALL). STORE operations are completed in 10ms max. and RECALL operations typi- cally within 1.5 µs. The CAT22C10 features unlimited RAM write operations either through external RAM PIN CONFIGURATION PIN FUNCTIONS Pin Name Function A0–A5 Address I/O0–I/O3 Data In/Out WE Write Enable CS Chip Select RECALL Recall STORE Store VCC +5V VSS Ground NC No Connect writes or internal recalls from EEPROM. Internal false store protection circuitry prohibits STORE operations when VCC is less than 3.0V. The CAT22C10 is manufactured using Catalyst’s ad- vanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles (EEPROM) and has a data retention of 10 years. The device is available in JEDEC approved 18-lead plastic DIP and 16-lead SOIC packages. SOIC Package (W) DIP Package (L) NC A4 A3 A2 Vss A1 CS STORE A0 NC Vcc A5 I/O3 I/O2 I/O1 I/O0 WE RECALL 1 2 3 4 5 6 7 8 9 14 13 11 10 12 15 16 17 18 1 2 3 4 5 6 7 8 14 13 11 10 9 12 15 16 A1 A2 A3 A4 A0 A5 Vcc I/O4 I/O3 I/O2 I/O1 Vss WE CS STORE RECALL CAT22C10 256-Bit Nonvolatile CMOS Static RAM |
类似零件编号 - CAT22C10LE20 |
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类似说明 - CAT22C10LE20 |
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