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STK0380F 数据表(PDF) 2 Page - KODENSHI_AUK CORP. |
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STK0380F 数据表(HTML) 2 Page - KODENSHI_AUK CORP. |
2 / 8 page Rev. date: 28-MAR-13 KSD-T0O024-002 www.auk.co.kr 2 of 8 Thermal Characteristics Characteristic Symbol Rating Unit Thermal resistance, junction to case Rth(j-c) Max. 4.16 C/W Thermal resistance, junction to ambient Rth(j-a) Max. 62.5 Electrical Characteristics (T C=25C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250uA, VGS=0 800 - - V Gate threshold voltage VGS(th) ID=250uA, VDS=VGS 3 - 5 V Drain-source cut-off current IDSS VDS=800V, VGS=0V - - 1 uA Gate leakage current IGSS VDS=0V, VGS=30V - - 100 nA Drain-source on-resistance (Note 3) RDS(ON) VGS=10V, ID=1.5A - 3.5 4.5 Forward transfer conductance (Note 3) gfs VDS=50V, ID=1.5A - 2.5 - S Input capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz - 706 917 pF Output capacitance Coss - 54 70 Reverse transfer capacitance Crss - 3.9 7.2 Turn-on delay time (Note 3,4) td(on) VDD=400V, ID=3A RG=25Ω - 16 42 ns Rise time (Note 3,4) tr - 44 98 Turn-off delay time (Note 3,4) td(off) - 22 56 Fall time (Note 3,4) tf - 32 76 Total gate charge (Note 3,4) Qg VDS=640V, VGS=10V ID=3A - 14.2 - nC Gate-source charge (Note 3,4) Qgs - 3.4 - Gate-drain charge (Note 3,4) Qgd - 5.4 - Source-Drain Diode Ratings and Characteristics (T C=25C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Source current (DC) IS Integral reverse diode in the MOSFET - - 3 A Source current (Pulsed) ISM - - 12 A Forward voltage VSD VGS=0V, IS=3A - - 1.4 V Reverse recovery time (Note 3,4) trr IS=3A, VGS=0V dIF/dt=100A/us - 520 - ns Reverse recovery charge (Note 3,4) Qrr - 3.2 - uC Note: 1. Repeated rating: Pulse width limited by safe operating area 2. L=69.7mH, IAS=3A, VDD=50V, RG=25, Starting TJ=25C 3. Pulse test: Pulse width ≤300us, Duty cycle≤2% 4. Essentially independent of operating temperature typical characteristics STK0380F |
类似零件编号 - STK0380F |
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类似说明 - STK0380F |
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