BYG21K, BYG21M

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Vishay General Semiconductor

Revision: 24-Aug-12

3

Document Number: 88961

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Reverse Current vs. Junction Temperature

Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature

Fig. 5 - Diode Capacitance vs. Reverse Voltage

Fig. 6 - Max. Reverse Recovery Charge vs. Forward Current

Fig. 7 - Thermal Response

1

10

100

25

50

75

100

125

150

Junction Temperature (°C)

V

0

20

40

60

80

100

120

25

50

75

100

125

150

Junction Temperature (°C)

V

P

at 100 % V

R

P

at 80 % V

R

0

5

10

15

20

25

0.1

1

10

100

f = 1 MHz

Reverse Voltage (V)

T

0

50

100

150

200

0

0.2

0.4

0.6

0.8

1.0

Forward Current (A)

T

T

T

T

I

1

10

100

1000

Pulse Length (s)

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

Single Pulse

125 K/W DC

t

t

t

t

t

t