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SI2333DDS-T1-GE3 数据表(PDF) 3 Page - Vishay Siliconix |
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SI2333DDS-T1-GE3 数据表(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 63861 S12-0801-Rev. A, 16-Apr-12 www.vishay.com 3 Vishay Siliconix Si2333DDS This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical support, please contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 5 10 15 20 0 0.5 1 1.5 2 V DS - Drain-to-Source Voltage (V) V GS = 5 V thru 2.5 V V GS = 1.5 V V GS 0.00 0.03 0.06 0.09 0.12 0.15 0 5 10 15 20 I D - Drain Current (A) V GS = 1.8 V V GS = 2.5 V V GS = 1.5 V V GS = 3.7 V V GS = 4.5 V 0 2 4 6 8 0 5 10 15 20 Q g - Total Gate Charge (nC) V DS = 9.6 V V DS = 3 V V DS = 6 V I D = 5 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 5 0 0.5 1 1.5 2 V GS - Gate-to-Source Voltage (V) T C = 25 °C T C = 125 °C T C = - 55 °C 0 500 1000 1500 2000 0 3 6 9 12 V DS - Drain-to-Source Voltage (V) C iss C oss C rss 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) I D = 5 A V GS = 4.5 V V GS = 2.5 V |
类似零件编号 - SI2333DDS-T1-GE3 |
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类似说明 - SI2333DDS-T1-GE3 |
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